JPH0529228Y2 - - Google Patents

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Publication number
JPH0529228Y2
JPH0529228Y2 JP11489590U JP11489590U JPH0529228Y2 JP H0529228 Y2 JPH0529228 Y2 JP H0529228Y2 JP 11489590 U JP11489590 U JP 11489590U JP 11489590 U JP11489590 U JP 11489590U JP H0529228 Y2 JPH0529228 Y2 JP H0529228Y2
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JP
Japan
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screen
water
waterway
river
intake
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Expired - Lifetime
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JP11489590U
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English (en)
Japanese (ja)
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JPH0473028U (en]
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Priority to JP11489590U priority Critical patent/JPH0529228Y2/ja
Publication of JPH0473028U publication Critical patent/JPH0473028U/ja
Application granted granted Critical
Publication of JPH0529228Y2 publication Critical patent/JPH0529228Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP11489590U 1990-10-31 1990-10-31 Expired - Lifetime JPH0529228Y2 (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11489590U JPH0529228Y2 (en]) 1990-10-31 1990-10-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11489590U JPH0529228Y2 (en]) 1990-10-31 1990-10-31

Publications (2)

Publication Number Publication Date
JPH0473028U JPH0473028U (en]) 1992-06-26
JPH0529228Y2 true JPH0529228Y2 (en]) 1993-07-27

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ID=31862618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11489590U Expired - Lifetime JPH0529228Y2 (en]) 1990-10-31 1990-10-31

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JP (1) JPH0529228Y2 (en])

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7175713B2 (en) 2002-01-25 2007-02-13 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7547952B2 (en) 2003-04-04 2009-06-16 Applied Materials, Inc. Method for hafnium nitride deposition
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501343B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501344B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7033922B2 (en) 2000-06-28 2006-04-25 Applied Materials. Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7115494B2 (en) 2000-06-28 2006-10-03 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7235486B2 (en) 2000-06-28 2007-06-26 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7465666B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7094680B2 (en) 2001-02-02 2006-08-22 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7494908B2 (en) 2001-09-26 2009-02-24 Applied Materials, Inc. Apparatus for integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7352048B2 (en) 2001-09-26 2008-04-01 Applied Materials, Inc. Integration of barrier layer and seed layer
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7175713B2 (en) 2002-01-25 2007-02-13 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US7473638B2 (en) 2002-01-26 2009-01-06 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US7094685B2 (en) 2002-01-26 2006-08-22 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7547952B2 (en) 2003-04-04 2009-06-16 Applied Materials, Inc. Method for hafnium nitride deposition
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

Also Published As

Publication number Publication date
JPH0473028U (en]) 1992-06-26

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